(A) study on channel shortening effect of BCE structured oxide thin film transistor depending on the active and source/drain materials = 엑티브 및 소스/드레인 재료에 따른 백 채널 에치 구조 산화물 박막 트랜지스터의 채널 쇼트닝 효과에 대한 연구

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In this research, we investigate the problems that can occur in the channel size of oxide semiconductors, which are reduced by fabrication high resolution and large size displays. In particual, the post annealing is nessesary in the the oxide semiconductor TFT fabrication process. The purpose is to create a map that predicts the degreee of channel shortening length. Three types of aluminum-doped tin oxide (Al: ITZO) and two kinds of metal source/drain materials were used to manufacturing back channel etching (BCE) structure TFTs. The activation energy and the prefactor of diffusion were obtained by using the post-annealing treatment of each device. The XPS analysis of the structure before and after the post-annealing showed the change in amount of oxygen vacancies.
Advisors
Park, Sang-Heeresearcher박상희researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2019.2,[iv, 37 p. :]

Keywords

Oxide semiconductor▼apostannealing▼aIn-Sn-Zn-O▼achannel Shortening Phenomenon▼adiffusion; 산화물 반도체▼a후-열처리▼a인듐-틴-징크-옥사이드▼a채널 쇼트닝 현상; 확산

URI
http://hdl.handle.net/10203/266450
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=843299&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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