Effects of wet etchant on the Al-doped In-Sn-Zn-O thin-film transistors with Cu/Cu diffusion barrier source-drain = 고이동도 산화물 반도체 구리/구리 확산 방지 전극 박막트랜지스터에 대한 습식 식각액 영향 연구

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The purpose of this research is to create a thin-film-transistor of a back-channel-etched structure with low resistance Cu and high mobility A-ITZO. To suppress the diffusion characteristics of Cu, Mo-based alloys such as Mo-Al, Mo-Al-Ti, Mo-Ti were applied as a diffusion barrier. The problems of back-channel-etched structure, etching residue and damage of channel surface after etched by the conventional and F-free etchant, were compared. Later, each barrier and etchant was applied to the TFTs and identified the electrical characteristics. In the case of Mo-Ti, no residue was present for both etchant, but channel surface damage was decreased. For Mo-Al and Mo-Al-Ti S/D, the residual and channel surface damage were reduced. The electrical characteristics of the device that etched by F-free etchant have been improved. This research provide direction for the manufacture and design of TFTs applied with Cu.
Advisors
Park, Sang-Heeresearcher박상희researcher
Description
한국과학기술원 :신소재공학과,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 신소재공학과, 2019.2,[v, 44 p. :]

Keywords

Oxide thin film transistor▼aAl-doped In-Sn-Zn-O▼aback channel etched structure; Cu diffusion barrier material▼amolybdenum-based alloy▼afluorine-free etchant▼aetching residue▼achannel surface dama; 산화물 박막 트랜지스터▼a알루미늄 도핑 인듐-주석-아연 산화물; 백채널 에치 구조; 구리 확산 방지 물질; 몰리브덴 합금▼a플루오린-프리 에천트▼a식각 잔여물▼a채널 표면 데미지

URI
http://hdl.handle.net/10203/266449
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=843284&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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