Terahertz detection based on plasma wave response in graphene field-effect transistor = 그래핀 전계 효과 트랜지스터의 플라즈마파 반응을 이용한 THz 검출

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Research and practical application have been developed utilizing terahertz gap between microwave and infrared light. Among that, Terahertz device utilizing field-effect transistors (FETs) such as III-V high-electron mobility transistors or Si-based metal oxide semiconductor transistors has been recently researched. Terahertz detection in FETs is mediated by the excitation of plasma waves within the channel of transistor. In this work, terahertz detection based on plasma wave response in graphene field-effect transistor are demonstrated and analyzed. In the first chapter, relative theory and research background is introduced. In the second chapter, the fabrication of graphene-field effect transistor and its optimization is discussed. In the third chapter, enhanced transconductance, which is essential for a high responsivity FET sensor, in a graphene-field effect transistor by adopting additional gate is studied. In the fourth chapter, short channel graphene field-effect transistor for enhanced plasma wave response is fabricated, and their performance is measured and analyzed.
Advisors
Choi, Yang-Kyuresearcher최양규researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2019
Identifier
325007
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2019.2,[vii, 55 p. :]

Keywords

Graphene▼aTerahertz▼aPlasma wave▼aFET▼aDetector; 그래핀▼a테라헤르츠▼a플라즈마파▼a전계효과트랜지스터▼a검출기

URI
http://hdl.handle.net/10203/265286
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=842210&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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