DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Yoo, Seunghyup | - |
dc.contributor.advisor | 유승협 | - |
dc.contributor.author | Lee, Seungwon | - |
dc.date.accessioned | 2019-08-25T02:45:44Z | - |
dc.date.available | 2019-08-25T02:45:44Z | - |
dc.date.issued | 2017 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=866973&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/265227 | - |
dc.description | 학위논문(박사) - 한국과학기술원 : 전기및전자공학부, 2017.2,[xii, 109 p. :] | - |
dc.description.abstract | With the scope of electronics being rapidly extended into emerging areas such as wearable, body-attachable, or disposable electronics, there is strong demand for realizing a flash memory - an indispensable element in modern electronic system - on various non-rigid platforms. Even with the advances achieved for flexible thin-film transistors over the last few decades, however, it has been challenging to develop a flash memory that exhibits practically viable performance and a high degree of flexibility at the same time. This setback originates mainly from the scarcity of soft dielectric materials that exhibit insulating properties that are sufficient to construct a flash memory, which involves dual dielectric layers respectively responsible for tunneling charges into a floating gate and blocking charges from leaking therefrom. Here we report ultra-flexible organic flash memories based on polymeric dielectric layers prepared by initiated chemical vapor deposition (iCVD). With the near-ideal dielectric characteristics of iCVD polymers and a device structure based on a rational design and material choice, we demonstrate a flexible flash memory bendable down to a radius of 300 $\mu$m that exhibits a projected retention over 10 years with a programming voltage on par with the present industrial standards. The proposed memory technology is then applied to non-conventional substrates such as paper to demonstrate its feasibility in a wide range of emerging applications. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | nonvolatile organic flash memory▼aiCVD polymer dielectric▼aflexible memory▼afoldable memory▼amemory on paper | - |
dc.subject | 비휘발성 유기 플래시 메모리▼aiCVD 고분자 절연막▼a유연 메모리▼a접는 메모리▼a종이 위 메모리 | - |
dc.title | Highly flexible organic flash memory on various soft platforms | - |
dc.title.alternative | 차세대 유연 전자 소자를 위한 다양한 유연 플랫폼 상에서의 고유연성 유기 플래시 메모리 | - |
dc.type | Thesis(Ph.D) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :전기및전자공학부, | - |
dc.contributor.alternativeauthor | 이승원 | - |
dc.title.subtitle | towards emerging soft electronics | - |
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