Pole-Controlled Wideband 120 GHz CMOS Power Amplifier for Wireless Chip-to-Chip Communication in 40-nm CMOS Process

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This paper proposes a wideband CMOS power amplifier (PA) with flat gain using a pole-controlled transformer in the sub-THz band for wireless chip-to-chip communication. An analysis of the transformer-based interstage matching network is presented, which indicates a zero in-band ripple condition. For verification, a pole-controlled PA (with an area of 0.33 mm² including PADs) is fabricated using a 40-nm CMOS process and measured. The proposed PA achieves a measured 3-dB bandwidth of 38.5 GHz from 96.5 GHz-to-135 GHz, small-signal gain of 15.8 dB, and saturated output power of 14.6 dBm with a peak power-added efficiency (PAEMAX) of 9.44%. The proposed PA shows state-of-the-art performance with respect to the bandwidth and other figures of merit.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-08
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS - II: EXPRESS BRIEFS, v.66, no.8, pp.1351 - 1355

ISSN
1549-7747
DOI
10.1109/TCSII.2018.2880308
URI
http://hdl.handle.net/10203/264302
Appears in Collection
EE-Journal Papers(저널논문)
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