Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power

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n this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are transferred on to a Si layer; the resulting Si-MoS2 p-n photodiode shows excellent performance with a responsivity (R) and detectivity (D*) of 76.1 A/W and 1012 Jones, respectively. In addition, the effect of the thickness of the depletion layer of the Si-MoS2 heterojunction on performance is investigated using the depletion layer model; based on the obtained results, we optimize the photoresponse of the device by varying the MoS2 thickness. Furthermore, low-frequency noise measurement is performed for the fabricated devices. The optimized device shows a low noise equivalent power (NEP) of 7.82×10-15 W Hz-1/2. Therefore, our proposed device could be utilized for various optoelectronic devices for low-light detection.
Publisher
AMER CHEMICAL SOC
Issue Date
2019-01
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.11, no.7, pp.7626 - 7634

ISSN
1944-8244
DOI
10.1021/acsami.8b21629
URI
http://hdl.handle.net/10203/263356
Appears in Collection
EE-Journal Papers(저널논문)
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