DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Yun Hyeok | ko |
dc.contributor.author | Lee, Hyunhwan | ko |
dc.contributor.author | Kang, Seung-Mo | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2019-07-18T05:32:54Z | - |
dc.date.available | 2019-07-18T05:32:54Z | - |
dc.date.created | 2019-07-15 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.25, pp.22801 - 22808 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/263321 | - |
dc.description.abstract | Despite innovative optical properties of quantum dots (QDs) for QDs-converted light-emitting diodes (QD-LEDs), the vulnerability of the QDs, against heat and moisture, has been a critical issue for commercialization and long-term use. To overcome the instabilities, we fabricated a thermally and photostable QDs-embedded silica/siloxane (S-QD/siloxane) film by embedding QDs in silica and siloxane encapsulation through a two-step sol-gel reaction. S-QDs were stably dispersed in the oligo-siloxane resin with even a QD concentration of 5 wt % without aggregation. The two-step physical barriers of silica and siloxane acted to decrease the toxicity of QDs and improve the stability against heat and moisture [85 degrees C/5% relative humidity (RH), 85 degrees C/85% RH, and 120 degrees C/5% RH], light (50 and 100 mA), and chemicals (ethanol, HCl, and NaOH). Our S-QD/siloxane film was applied as a color-conversion material on a blue LED chip without additional solidification and encapsulation processes for red and white QD-LEDs, exhibiting a wider color gamut (107% in CIE 1931) compared to NTSC. These enhancements indicate that our S-QD/siloxane film is a suitable material for long-term operation of QD-enhanced films and QD-LEDs in next-generation displays. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Two-Step-Enhanced Stability of Quantum Dots via Silica and Siloxane Encapsulation for the Long-Term Operation of Light Emitting Diodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000473251100081 | - |
dc.identifier.scopusid | 2-s2.0-85067925483 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 25 | - |
dc.citation.beginningpage | 22801 | - |
dc.citation.endingpage | 22808 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.9b06987 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | quantum dots | - |
dc.subject.keywordAuthor | sol-gel reaction | - |
dc.subject.keywordAuthor | white light-emitting diodes | - |
dc.subject.keywordAuthor | thermal and photostability | - |
dc.subject.keywordAuthor | long-term operation | - |
dc.subject.keywordPlus | HIGHLY LUMINESCENT | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | FLUORESCENCE | - |
dc.subject.keywordPlus | AGGREGATION | - |
dc.subject.keywordPlus | MONOLITH | - |
dc.subject.keywordPlus | LCD | - |
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