The Output Power Characteristics of the Series-connected RTD Pair

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In this work, the output power of the RTD-pair configuration with two different RTD epitaxial layer structures has been characterized and compared by measurements and simulations. The RTD-pair configurations with the two device structures show the improvement of the maximum output power by a factor of more than 2.5. From the comparison, the RTD with a wider peak-to-valley voltage difference is more beneficial for the enhanced RF power of RTD-pair configuration.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2019-05-20
Language
English
Citation

2019 Compound Semiconductor Week, CSW 2019

DOI
10.1109/ICIPRM.2019.8819014
URI
http://hdl.handle.net/10203/262664
Appears in Collection
EE-Conference Papers(학술회의논문)
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