Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures

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We present a short review of the theoretical and experimental results concerning the problem of excitation mechanism of erbium photoluminescence in silicon and silicon nanostructures. The excitation process consists of two stages, the first being absorption of radiation by bulk silicon matrix or nanocrystals while the second is the Auger excitation of erbium ions by recombining electron-hole pairs. The large values of Auger excitation cross-section under optical pumping in semiconductor matrices are due to large values of band-to-band absorption coefficient of bulk silicon or silicon nanocrystals exceeding by several orders of magnitude the absorption coefficient of erbium in dielectric SiO2 matrix. The specific features of Auger process in silicon nanocrystals when excitation of erbium ions is produced by quantum-confined electron-hole pairs are discussed. (C) 2003 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2003-12
Language
English
Article Type
Article; Proceedings Paper
Citation

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.105, no.1-3, pp.192 - 196

ISSN
0921-5107
DOI
10.1016/j.mseb.2003.08.044
URI
http://hdl.handle.net/10203/261939
Appears in Collection
PH-Journal Papers(저널논문)
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