Enhancement of erbium luminescence in c-Si by terahertz radiation

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We suggest a possible mechanism for enhancement of erbium luminescence in crystalline silicon by terahertz (THz) radiation under conditions of constant band-to-band pumping. The suggested mechanism consists of Auger excitation of an Er3+ ion into the second excited state by recombination of an electron-hole pair assisted by THz radiation. After the excitation Er3+ ion undergoes nonradiative relaxation into the first exited state, from which the radiative transition takes place. We estimate the value of the excitation probability for reasonable experimental parameters and show that the excitation process has a strong dependence on the frequency of the THz radiation and may be observed for frequencies in the range of 15-35 THz. (C) 2003 Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2003-12
Language
English
Article Type
Article; Proceedings Paper
Citation

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.105, no.1-3, pp.184 - 187

ISSN
0921-5107
DOI
10.1016/j.mseb.2003.08.042
URI
http://hdl.handle.net/10203/261938
Appears in Collection
PH-Journal Papers(저널논문)
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