Excitation of Er3+ ions in SiO2 with Si nanocrystals
Probabilities of excitation of erbium ions via Coulomb interaction with carriers localized in silicon nanocrystals embedded in SiO2, in recombination and intraband relaxation of these carriers, have been calculated.
- Publisher
- PLEIADES PUBLISHING INC
- Issue Date
- 2008-08
- Language
- English
- Article Type
- Article
- Citation
SEMICONDUCTORS, v.42, no.8, pp.971 - 979
- ISSN
- 1063-7826
- Appears in Collection
- PH-Journal Papers(저널논문)
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