Unconventional Inorganic-Based Memristive Devices for Advanced Intelligent Systems

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dc.contributor.authorSung, Sang Hyunko
dc.contributor.authorKim, Do Hyunko
dc.contributor.authorKim, Tae Jinko
dc.contributor.authorKang, Il-Sukko
dc.contributor.authorLee, Keon Jaeko
dc.date.accessioned2019-05-15T13:26:18Z-
dc.date.available2019-05-15T13:26:18Z-
dc.date.created2019-05-13-
dc.date.issued2019-04-
dc.identifier.citationADVANCED MATERIALS TECHNOLOGIES, v.4, no.4-
dc.identifier.issn2365-709X-
dc.identifier.urihttp://hdl.handle.net/10203/261877-
dc.description.abstractThe latest progresses in software engineering such as cloud computing, big data analysis, and machine learning have accelerated the emergence of advanced intelligent systems (AIS). However, the current computing system has significant challenges in dealing with unstructured data (e.g., image, voice, physiological signals) because the von-Neumann bottleneck induces latency and power consumption issues. Neuromorphic computing, which imitates the behaviors of neuron and synapse within the biological neural network, is considered a promising solution beyond von-Neumann architecture, since its collocated structure of processor and memory enables parallel processing of unstructured data with remarkable efficiency. Memristors are considered as next-generation nonvolatile memory devices due to fast speed, low power, and excellent scalability. However, a low reliability and leakage current issues remain as obstacle to the commercialization of memristors. Memristive devices have been widely investigated as a strong candidate for artificial synapses since their resistance modulation characteristics under electrical stimulus are analogous to the plasticity of the brain synapse. Although emulation of synaptic behavior by single memristor cells is demonstrated by many researchers, the development of fully functional memristive neural network requires further investigations. This paper introduces the recent advances and developments in the field of inorganic-based unconventional memristive devices for future AIS applications.-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleUnconventional Inorganic-Based Memristive Devices for Advanced Intelligent Systems-
dc.typeArticle-
dc.identifier.wosid000465321800025-
dc.identifier.scopusid2-s2.0-85062553043-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.issue4-
dc.citation.publicationnameADVANCED MATERIALS TECHNOLOGIES-
dc.identifier.doi10.1002/admt.201900080-
dc.contributor.localauthorLee, Keon Jae-
dc.contributor.nonIdAuthorSung, Sang Hyun-
dc.contributor.nonIdAuthorKang, Il-Suk-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoradvanced intelligent systems-
dc.subject.keywordAuthorartificial synapses-
dc.subject.keywordAuthorflexible memory-
dc.subject.keywordAuthormemristors-
dc.subject.keywordAuthorneuromorphic computing-
dc.subject.keywordPlusPHASE-CHANGE MEMORY-
dc.subject.keywordPlusRANDOM-ACCESS MEMORY-
dc.subject.keywordPlusRESISTIVE SWITCHING MEMORY-
dc.subject.keywordPlusDOPED GE2SB2TE5 FILMS-
dc.subject.keywordPlusPOWERED ACOUSTIC SENSOR-
dc.subject.keywordPlusOF-THE-ART-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusARTIFICIAL-INTELLIGENCE-
dc.subject.keywordPlusFLEXIBLE MEMRISTORS-
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