Unconventional Inorganic-Based Memristive Devices for Advanced Intelligent Systems

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The latest progresses in software engineering such as cloud computing, big data analysis, and machine learning have accelerated the emergence of advanced intelligent systems (AIS). However, the current computing system has significant challenges in dealing with unstructured data (e.g., image, voice, physiological signals) because the von-Neumann bottleneck induces latency and power consumption issues. Neuromorphic computing, which imitates the behaviors of neuron and synapse within the biological neural network, is considered a promising solution beyond von-Neumann architecture, since its collocated structure of processor and memory enables parallel processing of unstructured data with remarkable efficiency. Memristors are considered as next-generation nonvolatile memory devices due to fast speed, low power, and excellent scalability. However, a low reliability and leakage current issues remain as obstacle to the commercialization of memristors. Memristive devices have been widely investigated as a strong candidate for artificial synapses since their resistance modulation characteristics under electrical stimulus are analogous to the plasticity of the brain synapse. Although emulation of synaptic behavior by single memristor cells is demonstrated by many researchers, the development of fully functional memristive neural network requires further investigations. This paper introduces the recent advances and developments in the field of inorganic-based unconventional memristive devices for future AIS applications.
Publisher
WILEY
Issue Date
2019-04
Language
English
Article Type
Article
Citation

ADVANCED MATERIALS TECHNOLOGIES, v.4, no.4

ISSN
2365-709X
DOI
10.1002/admt.201900080
URI
http://hdl.handle.net/10203/261877
Appears in Collection
MS-Journal Papers(저널논문)
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