Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

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An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO2 with 2 similar to 4% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density (Dit) of 1.2 x 10(12) eV(-1) cm(-2), a record-low gate leakage current of 1.14 x 10(-7) A/cm(2) at -1 V, and peakmobility of 68 cm(2)/V.s. The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-04
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505

ISSN
0741-3106
DOI
10.1109/LED.2019.2899139
URI
http://hdl.handle.net/10203/261710
Appears in Collection
EE-Journal Papers(저널논문)
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