Effect of annealing on the microstructural and optical properties of InAs quantum dots grown on GaAs buffer layers

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dc.contributor.authorLee, Kyong Hako
dc.contributor.authorLee H.S.ko
dc.contributor.authorLee J.Y.ko
dc.contributor.authorLee D.U.ko
dc.contributor.authorKim T.W.ko
dc.contributor.authorKim M.D.ko
dc.date.accessioned2019-04-16T05:11:30Z-
dc.date.available2019-04-16T05:11:30Z-
dc.date.created2012-02-06-
dc.identifier.citation, v.45-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/260732-
dc.languageEnglish-
dc.titleEffect of annealing on the microstructural and optical properties of InAs quantum dots grown on GaAs buffer layers-
dc.typeConference-
dc.identifier.scopusid2-s2.0-12744276033-
dc.type.rimsCONF-
dc.citation.volume45-
dc.contributor.nonIdAuthorLee H.S.-
dc.contributor.nonIdAuthorLee J.Y.-
dc.contributor.nonIdAuthorLee D.U.-
dc.contributor.nonIdAuthorKim T.W.-
dc.contributor.nonIdAuthorKim M.D.-
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