NEW P-CHANNEL MOSFET STRUCTURE WITH SCHOTTKY-CLAMPED SOURCE AND DRAIN.
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Oh C.S. | ko |
| dc.contributor.author | Koh Y.H. | ko |
| dc.contributor.author | Kim, Choong Ki | ko |
| dc.date.accessioned | 2019-04-16T05:11:29Z | - |
| dc.date.available | 2019-04-16T05:11:29Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.identifier.citation | Technical Digest - International Electron Devices Meeting 1984., pp.609 - 612 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/260731 | - |
| dc.language | English | - |
| dc.title | NEW P-CHANNEL MOSFET STRUCTURE WITH SCHOTTKY-CLAMPED SOURCE AND DRAIN. | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-0021640290 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 609 | - |
| dc.citation.endingpage | 612 | - |
| dc.citation.publicationname | Technical Digest - International Electron Devices Meeting 1984. | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | San Francisco, CA, USA | - |
| dc.contributor.nonIdAuthor | Oh C.S. | - |
| dc.contributor.nonIdAuthor | Koh Y.H. | - |
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