NEW P-CHANNEL MOSFET STRUCTURE WITH SCHOTTKY-CLAMPED SOURCE AND DRAIN.

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dc.contributor.authorOh C.S.ko
dc.contributor.authorKoh Y.H.ko
dc.contributor.authorKim, Choong Kiko
dc.date.accessioned2019-04-16T05:11:29Z-
dc.date.available2019-04-16T05:11:29Z-
dc.date.created2012-02-06-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting 1984., pp.609 - 612-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10203/260731-
dc.languageEnglish-
dc.titleNEW P-CHANNEL MOSFET STRUCTURE WITH SCHOTTKY-CLAMPED SOURCE AND DRAIN.-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0021640290-
dc.type.rimsCONF-
dc.citation.beginningpage609-
dc.citation.endingpage612-
dc.citation.publicationnameTechnical Digest - International Electron Devices Meeting 1984.-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, CA, USA-
dc.contributor.nonIdAuthorOh C.S.-
dc.contributor.nonIdAuthorKoh Y.H.-
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