Stability of boron dopants at the interface between Si and amorphous SiO2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 오영준 | ko |
| dc.contributor.author | 노현균 | ko |
| dc.contributor.author | 장기주 | ko |
| dc.date.accessioned | 2019-04-16T02:51:20Z | - |
| dc.date.available | 2019-04-16T02:51:20Z | - |
| dc.date.created | 2014-01-12 | - |
| dc.date.issued | 2011-06 | - |
| dc.identifier.citation | The 7th KIAS Electronic Structure Calculation Workshop | - |
| dc.identifier.uri | http://hdl.handle.net/10203/260051 | - |
| dc.language | Korean | - |
| dc.publisher | KIAS | - |
| dc.title | Stability of boron dopants at the interface between Si and amorphous SiO2 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 7th KIAS Electronic Structure Calculation Workshop | - |
| dc.identifier.conferencecountry | KO | - |
| dc.contributor.localauthor | 장기주 | - |
| dc.contributor.nonIdAuthor | 오영준 | - |
| dc.contributor.nonIdAuthor | 노현균 | - |
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