Memory array using mechanical switch and method for operating thereof기계적인 스위치를 이용한 메모리 어레이의 동작방법

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dc.contributor.authorYoon, Jun-Boko
dc.contributor.authorJang, Weon-Wiko
dc.contributor.authorLee, Jeong-Oenko
dc.date.accessioned2019-04-15T15:00:07Z-
dc.date.available2019-04-15T15:00:07Z-
dc.date.issued2010-08-31-
dc.identifier.urihttp://hdl.handle.net/10203/254687-
dc.description.abstractA method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.-
dc.titleMemory array using mechanical switch and method for operating thereof-
dc.title.alternative기계적인 스위치를 이용한 메모리 어레이의 동작방법-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorYoon, Jun-Bo-
dc.contributor.nonIdAuthorJang, Weon-Wi-
dc.contributor.nonIdAuthorLee, Jeong-Oen-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber12122318-
dc.identifier.patentRegistrationNumber7,787,276-
dc.date.application2008-05-16-
dc.date.registration2010-08-31-
dc.publisher.countryUS-
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EE-Patent(특허)
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