Variable chemical decoration of extended defects in Cu-poor Cu2ZnSnSe4 thin films

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We report on atom probe tomography studies of variable chemical decorations at extended defects in Cu-poor and Zn-rich Cu2ZnSnSe4 thin films. For a precursor film, which was co-evaporated at 320 degrees C, grain boundaries and dislocations are found enriched with Cu. Furthermore, Na out-diffusion from the soda-lime glass substrate occurs even at such a low temperature, resulting in Na segregation at defects. In contrast, stacking faults in the precursor film show clear Zn enrichment as well as Cu and Sn depletion. After an annealing step at 500 degrees C, we detect changes in the chemical composition of grain boundaries as compared to the precursor. Moreover, we measure an increase in the grain boundary excess of Na by one order of magnitude. We show that grain boundaries and dislocations in the annealed Cu2ZnSnSe4 film exhibit no or only slight variations in composition of the matrix elements. Thus, the effect of annealing is a homogenization of the chemical composition.
Publisher
AMER PHYSICAL SOC
Issue Date
2019-03
Language
English
Article Type
Article
Citation

PHYSICAL REVIEW MATERIALS, v.3, no.3

ISSN
2475-9953
DOI
10.1103/PhysRevMaterials.3.035402
URI
http://hdl.handle.net/10203/254116
Appears in Collection
MS-Journal Papers(저널논문)
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