Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

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Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high NW density with a perfect selectivity with respect to a SiO2 surface. The growth temperature window was found to be rather narrow (815 degrees C +/- 5 degrees C). Steady-state and time-resolved photoluminescence from GaN NWs grown on graphene was compared with the results for GaN NWs grown on conventional substrates within the same molecular beam epitaxy reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820 degrees C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor-bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN NWs in a hollow hexagonal pattern. The NWs grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).
Publisher
IOP PUBLISHING LTD
Issue Date
2019-05
Language
English
Article Type
Article
Citation

NANOTECHNOLOGY, v.30, no.21, pp.214005

ISSN
0957-4484
DOI
10.1088/1361-6528/ab0570
URI
http://hdl.handle.net/10203/253920
Appears in Collection
PH-Journal Papers(저널논문)
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