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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

AUGER-ELECTRON SPECTROSCOPY QUANTITATIVE-ANALYSIS OF INTERFACIAL SIO2 LAYER

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dc.contributor.authorSOH, JWko
dc.contributor.authorLee, Won-Jongko
dc.date.accessioned2011-10-05T05:00:42Z-
dc.date.available2011-10-05T05:00:42Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-07-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.7A, pp.3666 - 3667-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/25378-
dc.description.abstractAuger electron spectroscopy (AES) depth profiles of the interfacial SiO2 and SiO2/Si3N4 layers formed between Ta2O5 film and Si substrate were quantitatively analyzed and the accuracy of the AES analysis was confirmed using a high-resolution cross-sectional transmission electron microscopy (TEM). It has been shown that the AES depth profiling technique is a convenient method for quantitative analysis of the ultrathin interfacial layers, enabling discrimination of the amorphous layers, SiO2/Si3N4.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherJAPAN J APPLIED PHYSICS-
dc.titleAUGER-ELECTRON SPECTROSCOPY QUANTITATIVE-ANALYSIS OF INTERFACIAL SIO2 LAYER-
dc.typeArticle-
dc.identifier.wosidA1995RK73000047-
dc.identifier.scopusid2-s2.0-0029346042-
dc.type.rimsART-
dc.citation.volume34-
dc.citation.issue7A-
dc.citation.beginningpage3666-
dc.citation.endingpage3667-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Won-Jong-
dc.contributor.nonIdAuthorSOH, JW-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorAUGER ELECTRON SPECTROSCOPY-
dc.subject.keywordAuthorDEPTH PROFILING-
dc.subject.keywordAuthorSILICON OXIDE-
dc.subject.keywordAuthorTHICKNESS MEASUREMENT-
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