AUGER-ELECTRON SPECTROSCOPY QUANTITATIVE-ANALYSIS OF INTERFACIAL SIO2 LAYER

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Auger electron spectroscopy (AES) depth profiles of the interfacial SiO2 and SiO2/Si3N4 layers formed between Ta2O5 film and Si substrate were quantitatively analyzed and the accuracy of the AES analysis was confirmed using a high-resolution cross-sectional transmission electron microscopy (TEM). It has been shown that the AES depth profiling technique is a convenient method for quantitative analysis of the ultrathin interfacial layers, enabling discrimination of the amorphous layers, SiO2/Si3N4.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1995-07
Language
English
Article Type
Article
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.7A, pp.3666 - 3667

ISSN
0021-4922
URI
http://hdl.handle.net/10203/25378
Appears in Collection
MS-Journal Papers(저널논문)
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