Low temperature nucleation of the perovskite phase in the deposition of Pb(Zr,Ti)O-3 films on the Pt/SiO2/Si substrate by electron cyclotron resonance plasma enhanced chemical vapor deposition

Abstract

PZT films were deposited on the Pt/SiO2/Si at 450-480 degrees C by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) and the nucleation behavior of those films was investigated. Above 470 degrees C, pure perovskite phase PZT films were obtained. At the initial stage of the aim deposition, an interfacial pyrochlore phase was formed. However, it was transformed to the perovskite phase as the deposition process proceeded. Below 460 degrees C, a non-perovskite phase ii as formed and the composition was deviated from the stoichiometry. By introducing lead titanate seed layer, pure perovskite PZT films with stoichiometric composition could be fabricated even below 460 degrees C for the wide range of Zr/Ti concentration ratio.