Effect of a TiO2 buffer layer on the CV properties of Pt/PbTiO3/TiO2/Si structure
Metal/ferroelectric/insulator/semiconductor (MFIS) capacitors were prepared by depositing PbTiO3 and TiO2 layers on Si(100) wafers at 450 and 550 degrees C using metal organic chemical vapor deposition (MOCVD). The C-V properties of the capacitors depend on the quality of TiO2 films and TiO2/Si interfaces. The TiO2 film could serve as an effective buffer layer against the Pb diffusion and provide good C-V properties as long as it was deposited at proper substrate temperature with proper thickness.
- Publisher
- JAPAN J APPLIED PHYSICS
- Issue Date
- 1997-04
- Language
- English
- Article Type
- Article
- Keywords
FILMS
- Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.36, no.9A , pp.5588 - 5589
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
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