Large Grain Ruthenium for Alternative Interconnects

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We demonstrate Ru wires with more than 4.6× larger grain sizes, with over 30% reduction in resistivity at highly scaled wire areas down to 68 nm2, compared to conventional damascene Ru wires. A method of transferring the extraordinarily large grain structures from thick Ru films to wires is presented. Suppressed grain-boundary scattering in the Ru wires is attributed to the low resistivity, which is analyzed using semi-classical resistivity model. The results strongly support Ru as a candidate alternative interconnect material to replace Cu.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-01
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.1, pp.91 - 94

ISSN
0741-3106
DOI
10.1109/LED.2018.2879932
URI
http://hdl.handle.net/10203/251848
Appears in Collection
EE-Journal Papers(저널논문)
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