Improvements in electrical properties of (Ba,Sr)TiO3 capacitor with chemical vapor deposited Pt top electrode using Pt hexafluoroacetylacetonate

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Electrical properties of (Bs,Sr)TiO3 (BST) thin films are characterized with sputtered and metal organic chemical vapor deposited (MOCVD) Pt top electrodes. BST films with MOCVD Pt top electrodes, which were deposited using Pt(CF3COCHCOCF3)(2) (Pt-HFA) as a precursor, showed less leakage current without bulged curves and a higher dielectric constant than those with sputtered Pt top electrodes. The improvement of electrical properties seems to result from the reduction of interface trap sites with the incorporation of fluorine atoms from HFA ligands. (C) 1999 American Institute of Physics. [S0003-6951(99)00623-3].
Publisher
AMER INST PHYSICS
Issue Date
1999-06
Language
English
Article Type
Article
Keywords

THIN-FILMS; BREAKDOWN; OXIDE

Citation

APPLIED PHYSICS LETTERS, v.74, no.23, pp.3489 - 3491

ISSN
0003-6951
DOI
10.1063/1.124139
URI
http://hdl.handle.net/10203/250977
Appears in Collection
MG-Journal Papers(저널논문)
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