DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, Jinwook | ko |
dc.contributor.author | Kim, Jungmo | ko |
dc.contributor.author | Kim, Jin | ko |
dc.contributor.author | Shin, Byungha | ko |
dc.contributor.author | Jeon, Seokwoo | ko |
dc.date.accessioned | 2019-02-20T05:11:12Z | - |
dc.date.available | 2019-02-20T05:11:12Z | - |
dc.date.created | 2019-02-11 | - |
dc.date.created | 2019-02-11 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.citation | CARBON, v.143, pp.294 - 299 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250342 | - |
dc.description.abstract | Here, we demonstrate a simple method of growing graphene directly on various dielectric substrate using vapor-phase metal catalyst via mobile hot-wire (MHW) assisted chemical vapor deposition (CVD). The MHWmade of nickel (Ni) is utilized as an independent source of the metal vapor as well as a moving heat source. The hot-wire temperature (Tw, 800-1100 degrees C) and the total chamber pressure (P-tot, 0.1-760 torr) determine the equilibrium partial vapor pressure of nickel (P-Ni, similar to 10(-11) to similar to 10(-3) torr). When the equilibrium P-Ni is built in the chamber, reaction between Ni vapor and carbon feedstock in a gaseous phase results in deposition of carbon containing Ni particles on dielectric substrate. The optimum growth conditions for low-defect and uniform graphene are found at the substrate temperature (T-sub) of 700 degrees C and the speed of MHW (V-w) near 1.0 mm/min, which determines the nucleation and lateral growth of graphene from the deposited Ni particles. Consequently, the PNi was clarified as a primary factor for graphene grown on non-catalytic substrate (NCS) by comparing the graphene grown by solid and vaporphase metal catalyst. We believe the results contribute to the understanding of the direct-growth mechanism of graphene on NCS. (C) 2018 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Growth of graphene on non-catalytic substrate by controlling the vapor pressure of catalytic nickel | - |
dc.type | Article | - |
dc.identifier.wosid | 000456710500033 | - |
dc.identifier.scopusid | 2-s2.0-85059336074 | - |
dc.type.rims | ART | - |
dc.citation.volume | 143 | - |
dc.citation.beginningpage | 294 | - |
dc.citation.endingpage | 299 | - |
dc.citation.publicationname | CARBON | - |
dc.identifier.doi | 10.1016/j.carbon.2018.11.027 | - |
dc.contributor.localauthor | Shin, Byungha | - |
dc.contributor.localauthor | Jeon, Seokwoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | BILAYER GRAPHENE | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SCALE | - |
dc.subject.keywordPlus | NI | - |
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