Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector

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dc.contributor.authorKim, Sunako
dc.contributor.authorKhan, Muhammad Ibrahim Wasiqko
dc.contributor.authorPark, Dae-Woongko
dc.contributor.authorLee, Sang-Gugko
dc.contributor.authorKim, Kyung Rokko
dc.date.accessioned2019-01-23T06:19:36Z-
dc.date.available2019-01-23T06:19:36Z-
dc.date.created2018-11-30-
dc.date.issued2018-11-
dc.identifier.citationIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.8, no.6, pp.681 - 687-
dc.identifier.issn2156-342X-
dc.identifier.urihttp://hdl.handle.net/10203/250018-
dc.description.abstractThis paper reports the effect of the source/drain junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source junction area than drain junction area. For experimental verification, three types of MOSFET detectors with different source/drain junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest drain junction area and the largest source junction area.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleEffects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector-
dc.typeArticle-
dc.identifier.wosid000453572200016-
dc.identifier.scopusid2-s2.0-85052678444-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue6-
dc.citation.beginningpage681-
dc.citation.endingpage687-
dc.citation.publicationnameIEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY-
dc.identifier.doi10.1109/TTHZ.2018.2866941-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.nonIdAuthorKhan, Muhammad Ibrahim Wasiq-
dc.contributor.nonIdAuthorKim, Kyung Rok-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
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