Effects of Parasitic Source/Drain Junction Area on THz Responsivity of MOSFET Detector

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This paper reports the effect of the source/drain junction area on the responsivity of a metal-oxide field-effect transistor (MOSFET)-based terahertz (THz) detector. From the numerical analysis based on the distributed-channel model for the plasma-wave detection mechanism, it is predicted that both the responsivity and noise-equivalent power (NEP) are improved with a relatively larger source junction area than drain junction area. For experimental verification, three types of MOSFET detectors with different source/drain junction areas are fabricated with 65-nm CMOS technology. From on-wafer measurement at 0.3 THz, 2.57 times enhanced responsivity and 63% reduced NEP have been obtained in the sample with the smallest drain junction area and the largest source junction area.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-11
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.8, no.6, pp.681 - 687

ISSN
2156-342X
DOI
10.1109/TTHZ.2018.2866941
URI
http://hdl.handle.net/10203/250018
Appears in Collection
EE-Journal Papers(저널논문)
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