Low Field Mobility in GaAs Ion-implanted FET's
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Kang | - |
| dc.contributor.author | shur, Michael S. | - |
| dc.contributor.author | Lee, Kwyro | - |
| dc.contributor.author | Vu, Tho T. | - |
| dc.contributor.author | Roberts, P. C. T. | - |
| dc.contributor.author | Helix, M. J. | - |
| dc.date.accessioned | 2011-08-22 | - |
| dc.date.available | 2011-08-22 | - |
| dc.date.issued | 1984 | - |
| dc.identifier.citation | IEEE Transactions on Electron Devices, Vol.ED-31, No.3 | en |
| dc.identifier.uri | http://hdl.handle.net/10203/24952 | - |
| dc.description.abstract | We describe a new technique which allows one to deduce the mobility profiles under the gate of an ion-implanted GaAs MESFET. The technique is based on the measurements of the transconductance and the series resistance at very low drain-to-source voltages. The experimental results show that the mobility drops to about 1000 cm2/V . s at the channel interface from its maximum value of about 2500 cm2/ V . s. | en |
| dc.description.sponsorship | The authors would like to thank R. Jiracek of SRC. Honeywell, for his help in the wafer testing. | en |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | en |
| dc.title | Low Field Mobility in GaAs Ion-implanted FET's | en |
| dc.type | Article | en |
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