A Very Low Operation Current InGaAsp/inp Total Internal Reflection Optical Switch Using p/n/p/n Current Blocking Layers

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A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n+-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits.
Publisher
IEEE
Issue Date
1994
Citation

IEEE Photonics Technology Letters, Vol.6, No.1

URI
http://hdl.handle.net/10203/24866
Appears in Collection
EE-Journal Papers(저널논문)
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