A Very Low Operation Current InGaAsp/inp Total Internal Reflection Optical Switch Using p/n/p/n Current Blocking Layers

Abstract

A very low operation current (20 mA) has been achieved for the first time with an InGaAsP/InP total-internal-reflection optical switch. The optical switch is fabricated on an n+-InP substrate using p/n/p/n current blocking layers. This switch has a large effective contact area and is a self-aligned structure. This is a promising result for making optical integrated circuits.