Experiments and 2D-Simulations for Quasisaturation Effect in Power VDMOS Transistors

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Issue Date
1990
Language
ENG
Citation

Proc. of 2nd Int. Sym. on Power Semicondcutor Devices and ICs, pp.219 - 224

URI
http://hdl.handle.net/10203/24846
Appears in Collection
EE-Conference Papers(학술회의논문)
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