DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Hyunki | ko |
dc.contributor.author | Utomo, Dzuhri Radityo | ko |
dc.contributor.author | Shin, Saebyeok | ko |
dc.contributor.author | Han, Seok-Kyun | ko |
dc.contributor.author | Lee, Sang-Gug | ko |
dc.contributor.author | Kim, Jusung | ko |
dc.date.accessioned | 2018-12-20T01:59:13Z | - |
dc.date.available | 2018-12-20T01:59:13Z | - |
dc.date.created | 2018-11-30 | - |
dc.date.created | 2018-11-30 | - |
dc.date.created | 2018-11-30 | - |
dc.date.issued | 2018-11-14 | - |
dc.identifier.citation | 15th International SOC Design Conference(ISOCC), pp.105 - 106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/247264 | - |
dc.description.abstract | This paper presents the Ka-band RF front-end for the frequency channelization receiver. The main blocks of the RF front-end are the low-noise amplifier(LNA), on-chip passive Balun, down-conversion mixer and output buffer. To achieve broad bandwidth at Ka-band frequency, stagger tuned load and series peaking technique are employed. The prototype receiver front-end was designed in 45nm CMOS technology. The prototype circuit achieves >15dB conversion gain, 5dB NF and >-15dBm IIP3 with 87.6mW power consumption and 0.42mm(2) active area. | - |
dc.language | English | - |
dc.publisher | ISOCC | - |
dc.title | Ka-band RF Front-End with 5dB NF and 16dB conversion gain in 45nm CMOS technology | - |
dc.type | Conference | - |
dc.identifier.wosid | 000462769800041 | - |
dc.identifier.scopusid | 2-s2.0-85063219110 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 105 | - |
dc.citation.endingpage | 106 | - |
dc.citation.publicationname | 15th International SOC Design Conference(ISOCC) | - |
dc.identifier.conferencecountry | KO | - |
dc.identifier.conferencelocation | Hotel Inter-Burgo Daegu | - |
dc.identifier.doi | 10.1109/ISOCC.2018.8649986 | - |
dc.contributor.localauthor | Lee, Sang-Gug | - |
dc.contributor.nonIdAuthor | Kim, Jusung | - |
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