DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Buil | ko |
dc.contributor.author | Ha, Jaekwon | ko |
dc.contributor.author | Yoon, Chongsei | ko |
dc.contributor.author | Yoon, Giwan | ko |
dc.date.accessioned | 2018-11-22T07:08:57Z | - |
dc.date.available | 2018-11-22T07:08:57Z | - |
dc.date.created | 2018-11-19 | - |
dc.date.created | 2018-11-19 | - |
dc.date.created | 2018-11-19 | - |
dc.date.created | 2018-11-19 | - |
dc.date.created | 2018-11-19 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.113, no.24 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/246919 | - |
dc.description.abstract | In this letter, we present the fabrication and characterization of a zinc oxide (ZnO)-based nanogenerator for piezoelectric micro-energy harvesting by combining thin films of amorphous silicon (a-Si) and ZnO. We utilized the a-Si thin film as an interlayer to assemble several a-Si/ZnO-stacked piezoelectric nanogenerators (SZPNGs) on indium tin oxide (ITO)-coated polyethylene naphthalate substrates. We investigated the influence of the a-Si layer thickness on the output voltages of the SZPNGs and demonstrated the existence of an optimal a-Si thickness for maximizing the output voltage. Overall, the SZPNGs generated higher output voltages than a conventional ZnO-based piezoelectric nanogenerator (ZPNG) lacking an a-Si interlayer, indicating enhanced performance. In particular, the SZPNG based on the optimal a-Si thickness exhibited a sixfold higher output voltage compared with the conventional ZPNG. This improved performance was ascribed to a combination of the Schottky barrier at the ITO/a-Si interface, preventing the screening effect and the relatively high dielectric constant (ϵ r13) of a-Si, minimizing the loss of the piezoelectric potential induced in the ZnO layer. The results herein are expected to assist the development of even more advanced ZnO-based piezoelectric nanogenerators in the future. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Effect of a-Si thin film on the performance of a-Si/ZnO-stacked piezoelectric energy harvesters | - |
dc.type | Article | - |
dc.identifier.wosid | 000453223900037 | - |
dc.identifier.scopusid | 2-s2.0-85058540114 | - |
dc.type.rims | ART | - |
dc.citation.volume | 113 | - |
dc.citation.issue | 24 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.5060638 | - |
dc.contributor.localauthor | Yoon, Giwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ANISOTROPY | - |
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