Stretchable active matrix of oxide thin-film transistors with monolithic liquid metal interconnects

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We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 x 4 active matrix of oxide TFTs within a 20 x 20 mm(2) area, which provides stable operation up to 40% of stretching. (C) 2018 The Japan Society of Applied Physics
Publisher
IOP PUBLISHING LTD
Issue Date
2018-10
Language
English
Article Type
Article
Citation

APPLIED PHYSICS EXPRESS, v.11, no.12, pp.126501

ISSN
1882-0778
DOI
10.7567/APEX.11.126501
URI
http://hdl.handle.net/10203/246684
Appears in Collection
CBE-Journal Papers(저널논문)
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