High Breakdown and 1/f Noise Enhancement n-MOSFET Suitable for Analog MOS Intergrated Circuits

Abstract

Buried-channel enhancement n-MOSFET using p-type doped polysilicon gate for high performance MOS integrated circuits is presented. Copmared to the conventional enhancement n-MOSFET, this device shows much higher breakdown voltage, smaller hot electron effect, and lower 1/f noise characteristics, with their almost identical static I-V characteristics in the linear and saturation regions.