Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature

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SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power N-2 plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature (300-500 degrees C).
Publisher
ELSEVIER SCIENCE BV
Issue Date
2018-11
Language
English
Article Type
Article
Citation

CURRENT APPLIED PHYSICS, v.18, no.11, pp.1436 - 1440

ISSN
1567-1739
DOI
10.1016/j.cap.2018.08.012
URI
http://hdl.handle.net/10203/246302
Appears in Collection
PH-Journal Papers(저널논문)
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