NEW APPROACH FOR MODELING OF CURRENT DEGRADATION IN HOT-ELECTRON DAMAGED LDD NMOSFETS
An analytical model describing current degradation in hot-electron damaged LDD NMOSFETs is proposed. The basic idea of the model is that the drain current degradation can be explained in terms of an increase in the parasitic resistance only. Good agreement with measured data over at least three decades of stress time is obtained with our model.
- Issue Date
- 1995-02
- Language
- English
- Article Type
- Note
- Keywords
MOSFETS
- Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.2, pp.362 - 365
- ISSN
- 0018-9383
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 7 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.