DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jin, Ik Kyeong | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Tcho, Il-Woong | ko |
dc.contributor.author | Park, Sang-Jae | ko |
dc.contributor.author | Kim, Weon-Guk | ko |
dc.contributor.author | Han, Joon-Kyu | ko |
dc.contributor.author | Lee, Seung-Wook | ko |
dc.contributor.author | Kim, Seong-Yeon | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Kim, Daewon | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-10-19T00:48:21Z | - |
dc.date.available | 2018-10-19T00:48:21Z | - |
dc.date.created | 2018-10-08 | - |
dc.date.created | 2018-10-08 | - |
dc.date.issued | 2018-10 | - |
dc.identifier.citation | NANO ENERGY, v.52, pp.63 - 70 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/10203/246143 | - |
dc.description.abstract | Irrecoverable data destruction on a mobile device is important to prevent unintentional data disclosure. In this regard, transient electronics, a form of electronics that can be made to disappear or can be destroyed in a controllable manner, has been actively researched. To erase data completely, irreversible reactions such as physical or chemical destruction have been used. However, these techniques either require external voltage or destroy a memory device so that it cannot be reused. Here, we demonstrate a novel self-powered data-erasing method for nanoscale flash memory devices which uses triboelectricity via a kill switch, which consists of a nylon pad connected to a gate electrode of the flash memory. Through a one-time touch of the kill switch by a finger wearing a polytetrafluoroethylene (PTFE) glove, data stored in flash memory is set to the '1' state on the chip scale simultaneously with low-level triboelectricity, allowing the memory to be reused afterward. Moreover, the memory can be permanently destroyed by a single touch of the kill switch with a finger without a glove that generates high-level triboelectricity. These erase methods provide a rapid and convenient means of self-powered irrecoverable data erasing in the era of the Internet of Things (IoT). | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | FIELD-EFFECT TRANSISTOR | - |
dc.subject | TRIBOTRONIC TRANSISTOR | - |
dc.subject | ELECTRONICS | - |
dc.subject | SENSORS | - |
dc.subject | ENERGY | - |
dc.subject | SWITCH | - |
dc.title | Self-powered data erasing of nanoscale flash memory by triboelectricity | - |
dc.type | Article | - |
dc.identifier.wosid | 000444859700007 | - |
dc.identifier.scopusid | 2-s2.0-85050391661 | - |
dc.type.rims | ART | - |
dc.citation.volume | 52 | - |
dc.citation.beginningpage | 63 | - |
dc.citation.endingpage | 70 | - |
dc.citation.publicationname | NANO ENERGY | - |
dc.identifier.doi | 10.1016/j.nanoen.2018.07.040 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Jin, Ik Kyeong | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.contributor.nonIdAuthor | Lee, Byung-Hyun | - |
dc.contributor.nonIdAuthor | Han, Joon-Kyu | - |
dc.contributor.nonIdAuthor | Lee, Seung-Wook | - |
dc.contributor.nonIdAuthor | Kim, Daewon | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Triboelectric nanogenerator (TENG) | - |
dc.subject.keywordAuthor | Tribotronics | - |
dc.subject.keywordAuthor | Transient electronics | - |
dc.subject.keywordAuthor | Flash memory | - |
dc.subject.keywordAuthor | Data erasing | - |
dc.subject.keywordAuthor | Junctionless transistor | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | TRIBOTRONIC TRANSISTOR | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | SWITCH | - |
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