High-Aspect Ratio beta-Ga2O3 Nanorods via Hydrothermal Synthesis

Cited 3 time in webofscience Cited 0 time in scopus
  • Hit : 119
  • Download : 38
High-aspect ratio beta-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio beta-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio beta-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of beta-Ga2O3 and expedite the integration of one-dimensional beta-Ga2O3 into future electronics, sensors, and optoelectronics.
Publisher
MDPI
Issue Date
2018-08
Language
English
Article Type
Article
Citation

NANOMATERIALS, v.8, no.8

ISSN
2079-4991
DOI
10.3390/nano8080594
URI
http://hdl.handle.net/10203/245922
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
106248.pdf(2.83 MB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 3 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0