Control of carrier concentration by Ag doping in n-type Bi2Te3 based compounds

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Many elements have been used as dopants to enhance the thermoelectric performance of Bi2Te3 -related materials. Among them, Ag's effect on thermoelectric properties, where Ag acts as a donor or acceptor, remains unclear. To elucidate the role of Ag in n-type Bi2Te3 based compounds, Ag was added to n-type (Bi0.9Sb0.1)(2)(Te0.85Se0.15)(3). As the amount of Ag was increased, the electron concentration decreased, which means Ag acted as an acceptor. The added Ag atoms were found to occupy interstitial sites in the hexagonal lattices, as confirmed by X-ray analysis and first principles calculations. The reduction in electron concentration was attributed to the interaction between the interstitial Ag and intrinsic defects.
Publisher
MDPI
Issue Date
2018-05
Language
English
Article Type
Article
Citation

APPLIED SCIENCES-BASEL, v.8, no.5

ISSN
2076-3417
DOI
10.3390/app8050735
URI
http://hdl.handle.net/10203/244992
Appears in Collection
EE-Journal Papers(저널논문)
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