Sanitization of Data in Nanoscale Flash Memory by Thermal Erasing and Reuse of Storage

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This study, a thermal method for erasing and permanently destroying data stored in flash memory fabricated on a suspended silicon nanowire is demonstrated. An intentionally applied heat treatment is used to erase the data stored in the charge trap layer of the flash memory. The data destruction is verified and analyzed at a unit cell level as well as in a commercial off-the-shelf chip. Characteristics of memory performance and reliability are also investigated. Then, the feasibility of the proposed method is further evaluated for next generation 3-dimensional V-NAND.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2018-07
Language
English
Article Type
Article
Keywords

SILICON NANOWIRE; BULK SUBSTRATE; TRANSISTORS

Citation

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.215, no.14

ISSN
1862-6300
DOI
10.1002/pssa.201800194
URI
http://hdl.handle.net/10203/244973
Appears in Collection
EE-Journal Papers(저널논문)
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