High-performance silicon MMI switch based on thermo-optic control of interference modes

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We demonstrate a compact and high-performance 1 x 2 silicon MMI switch by thermo-optic control of symmetric interference modes using local and direct heating of the mode-peak regions. The direct heater is formed with n-i-n-i-n resistors whose i-regions are placed at the peak regions of the first two-folded image. Three electrodes are separately formed on each n-doped region for alternative heating of the two i-regions. Using a symmetric 1 x 2 MMI designed as a 50:50 splitter under no bias, path switching is attained by inducing a phase difference of +/-pi/2 between the two modes, applying a bias to either n-i-n heater. From this switching scheme, we achieve a low crosstalk of less than -30 dB with a compact active area of 3 mu m x 40 mu m. We also observe a fast switching response with a rising time of 1.04 mu s and a falling time of 0.89 mu s.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-08
Language
English
Article Type
Article
Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.30, no.16, pp.1427 - 1430

ISSN
1041-1135
DOI
10.1109/LPT.2018.2850907
URI
http://hdl.handle.net/10203/244955
Appears in Collection
EE-Journal Papers(저널논문)
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