Physical understanding of Low Field Mobility in Silicon Invension Layer and its Implications for Deep Submicron MOSFET Design
- Publisher
- 한국물리학회
- Issue Date
- 1993-01
- Language
- English
- Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.26, pp.S82 - S84
- ISSN
- 3744-4884
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
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