Performance Degradation of Flexible Si Nanomembrane Transistors with Al2O3 and SiO2 Dielectrics under Mechanical Stress

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Flexible Si nanomembrane transistors with Al2O3 and SiO2 gate dielectrics were fabricated, and their mechanical stability was compared under various bending conditions. Both the Al2O3 and SiO2 gate dielectric devices exhibited good charge transport properties, which was associated with the advantage of having a fully depleted mode in the MOSFET operation. The results of the comparison showed that the Al2O3 gate dielectric device degraded to a greater extent than the SiO2 gate dielectric device under the same bending condition. The greater degradation in the Al2O3 gate dielectric device was attributed to the higher Young's modulus of the Al2O3, which put more strain on the Al2O3 under the same bending condition.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-07
Language
English
Article Type
Article
Keywords

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Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.7, pp.3069 - 3072

ISSN
0018-9383
DOI
10.1109/TED.2018.2831705
URI
http://hdl.handle.net/10203/244280
Appears in Collection
EE-Journal Papers(저널논문)
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