New Non-volatile Multi-level Cell Using Epitaxial Strain Effect and Double Ferroelectric Tunnel Junctions
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신민철 | ko |
| dc.contributor.author | 서준범 | ko |
| dc.contributor.author | 김문회 | ko |
| dc.date.accessioned | 2018-07-24T01:28:37Z | - |
| dc.date.available | 2018-07-24T01:28:37Z | - |
| dc.date.created | 2018-06-21 | - |
| dc.date.created | 2018-06-21 | - |
| dc.date.issued | 2018-02-07 | - |
| dc.identifier.citation | 제25회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/243637 | - |
| dc.language | English | - |
| dc.publisher | (사)한국반도체연구조합 | - |
| dc.title | New Non-volatile Multi-level Cell Using Epitaxial Strain Effect and Double Ferroelectric Tunnel Junctions | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제25회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도 하이원 리조트 | - |
| dc.contributor.localauthor | 신민철 | - |
| dc.contributor.nonIdAuthor | 김문회 | - |
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