Laterally stitched heterostructure of graphene and molybdenum disulfide for performance enhancement of $MoS_2$ FET = $MoS_2$ 채널 소자의 성능 향상을 위한 그래핀과의 수평 이종구조에 관한 연구

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dc.contributor.advisorChoi, Sung-Yool-
dc.contributor.advisor최성율-
dc.contributor.authorHong, Woonggi-
dc.date.accessioned2018-06-20T06:22:43Z-
dc.date.available2018-06-20T06:22:43Z-
dc.date.issued2017-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=675453&flag=dissertationen_US
dc.identifier.urihttp://hdl.handle.net/10203/243344-
dc.description학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2017.2,[Ⅵ, 48 p. :]-
dc.description.abstract2-dimensional materials, especially TMDCs such as $MoS_2, MoSe_2, WS_2, WSe_2$ which consist of one transition metal atom and two chalcogen atoms, have received much attention since grapheme was successfully detached from graphite with scotch tape method. Due to its impressive electrical, optical and mechanical properties, many researchers have researched it. Chemical Vapor Deposition (CVD) enables TMDCs to be synthesized in large area and many researches about applications of TMDCs have been carried out using TMDCs having large area. But electrical property of TMDCs is not sufficient for already commercialized device applications. To overcome the insufficient electrical property, researchers make an effort using heterostructure which consists of two other materials like $MoS_2/WS_2, MoSe_2/WSe_2,$ and $MoS_2/WSe_2$. And also in-plane heterostructure is actively researched. In this thesis, in order to enhance the electrical performance of $MoS_2$ having n-type semiconducting property, laterally stitched heterostructure of graphene and $MoS_2$ was used. The method for making the stitched heterostructure by Chemical Vapor Deposition (CVD) was suggested and Optical analysis, Atomic Force Microscopy, Secondary Electron Microscopy and Transmission Electron Microscopy were used for analyzing the lateral junction part. Also, field effect transistor having graphene as source/drain and MoS2 as channel was fabricated. By comparing with MoS2 field effect transistor, it is proved that laterally stitched heterostructure can make better electrical performance.-
dc.languageeng-
dc.publisher한국과학기술원-
dc.subjectGraphene-
dc.subjectTransition Metal Dichalcogenide-
dc.subjectChemical Vapor Deposition-
dc.subjectLaterally stitched structure-
dc.subjectMoS2-
dc.subject그래핀-
dc.subject전이금속 칼코젠 화합물-
dc.subject화학 기상 증착법-
dc.subject수평 이종 구조-
dc.subject이황화몰리브덴-
dc.titleLaterally stitched heterostructure of graphene and molybdenum disulfide for performance enhancement of $MoS_2$ FET = $MoS_2$ 채널 소자의 성능 향상을 위한 그래핀과의 수평 이종구조에 관한 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN325007-
dc.description.department한국과학기술원 :전기및전자공학부,-
dc.contributor.alternativeauthor홍웅기-
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EE-Theses_Master(석사논문)
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