Laterally stitched heterostructure of graphene and molybdenum disulfide for performance enhancement of $MoS_2$ FET = $MoS_2$ 채널 소자의 성능 향상을 위한 그래핀과의 수평 이종구조에 관한 연구

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2-dimensional materials, especially TMDCs such as $MoS_2, MoSe_2, WS_2, WSe_2$ which consist of one transition metal atom and two chalcogen atoms, have received much attention since grapheme was successfully detached from graphite with scotch tape method. Due to its impressive electrical, optical and mechanical properties, many researchers have researched it. Chemical Vapor Deposition (CVD) enables TMDCs to be synthesized in large area and many researches about applications of TMDCs have been carried out using TMDCs having large area. But electrical property of TMDCs is not sufficient for already commercialized device applications. To overcome the insufficient electrical property, researchers make an effort using heterostructure which consists of two other materials like $MoS_2/WS_2, MoSe_2/WSe_2,$ and $MoS_2/WSe_2$. And also in-plane heterostructure is actively researched. In this thesis, in order to enhance the electrical performance of $MoS_2$ having n-type semiconducting property, laterally stitched heterostructure of graphene and $MoS_2$ was used. The method for making the stitched heterostructure by Chemical Vapor Deposition (CVD) was suggested and Optical analysis, Atomic Force Microscopy, Secondary Electron Microscopy and Transmission Electron Microscopy were used for analyzing the lateral junction part. Also, field effect transistor having graphene as source/drain and MoS2 as channel was fabricated. By comparing with MoS2 field effect transistor, it is proved that laterally stitched heterostructure can make better electrical performance.
Advisors
Choi, Sung-Yoolresearcher최성율researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2017
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2017.2,[Ⅵ, 48 p. :]

Keywords

Graphene; Transition Metal Dichalcogenide; Chemical Vapor Deposition; Laterally stitched structure; MoS2; 그래핀; 전이금속 칼코젠 화합물; 화학 기상 증착법; 수평 이종 구조; 이황화몰리브덴

URI
http://hdl.handle.net/10203/243344
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=675453&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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