Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu-Se-based atomic switch

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Atomic switches are well-known promising candidates for future application in non-volatile logic memory devices. The resistive switching characteristics of these devices depend on the formation of a conductive filament (CF) by active metal electrodes. However, the formation of a stable CF is still a challenge owing to filament overgrowth in the solid electrolyte. To achieve controlled CF growth, we have used a modified active electrode with different CuxSe1_(x)composition ratios (0.01 <x<0.45) and a titanium (Ti) buffer layer. The optimum composition was determined to be Cu0.11Se0.89/Ti (2.5 nm) for which excellent resistive switching properties were observed, such as a high on/off ratio of 10(4), low operating voltage, uniform resistance distribution, ten-year data retention at 85 degrees C, and uniform endurance (2000 cycles). The improvement is can be described from the high controllability of the oxidation-reduction reaction rate of the optimized Cu-Se modified active electrode by the means of Ti buffer layer and the Ti-O bond formation at the Ti/Al2O3 interface. In addition, depth profiles of the conductive filament based on Cu0.11Se0.89 with a Ti buffer layer were studied by performing current atomic force microscopy (I-AFM) to evaluate the enhancements in electrical performance and reliability resulting from the insertion of the Ti buffer layer. (C) 2018 Published by Elsevier B.V.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2018-07
Language
English
Article Type
Article
Keywords

RANDOM-ACCESS MEMORY; AL2O3-BASED RRAM; FILAMENT; DEVICES

Citation

JOURNAL OF ALLOYS AND COMPOUNDS, v.753, pp.551 - 557

ISSN
0925-8388
DOI
10.1016/j.jallcom.2018.04.179
URI
http://hdl.handle.net/10203/242518
Appears in Collection
EE-Journal Papers(저널논문)
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