High-Sensitivity and Low-Power Flexible Schottky Hydrogen Sensor Based on Silicon Nanomembrane

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High-performance and low-power flexible Schottky diode-based hydrogen sensor was developed. The sensor was fabricated by releasing Si nanomembrane (SiNM) and transferring onto a plastic substrate. After the transfer, palladium (Pd) and aluminum (Al) were selectively deposited as a sensing material and an electrode, respectively. The top down fabrication process of flexible Pd/SiNM diode H-2 sensor is facile compared to other existing bottom-up fabricated flexible gas sensors while showing excellent H-2 sensitivity (Delta I/I-0 > 700-0.5% H-2 concentrations) and fast response time (tau(10-90) = 22 s) at room temperature. In addition, selectivity, humidity, and mechanical tests verify that the sensor has excellent reliability and robustness under various environments. The operating power consumption of the sensor is only in the nanowatt range, which indicates its potential applications in low-power portable and wearable electronics.
Publisher
AMER CHEMICAL SOC
Issue Date
2018-04
Language
English
Article Type
Article
Keywords

GAS SENSOR; THIN-FILM; HIGH-PERFORMANCE; BARRIER DIODE; NANOWIRE; NANOPARTICLES; TRANSISTOR; NANOTUBES

Citation

ACS APPLIED MATERIALS & INTERFACES, v.10, no.15, pp.12870 - 12877

ISSN
1944-8244
DOI
10.1021/acsami.8b01583
URI
http://hdl.handle.net/10203/242352
Appears in Collection
ME-Journal Papers(저널논문)
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